Please use this identifier to cite or link to this item: http://oaps.umac.mo/handle/10692.1/19
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dc.contributor.authorYANG, SHIHENG (楊世恒)-
dc.date.accessioned2014-10-11T16:03:36Z-
dc.date.available2014-10-11T16:03:36Z-
dc.date.issued2014-
dc.identifier.citationYANG, S. H. (2014). Electromagnetic Interference Resisting Circuit (Outstanding Academic Papers by Students (OAPS)). Retrieved from University of Macau, Outstanding Academic Papers by Students Repository.en_US
dc.identifier.urihttp://hdl.handle.net/10692.1/19-
dc.description.abstractAn electromagnetic interference (EMI) resisting circuit is described. It is improved from the classic Kuijk Bandgap with a PMOS pass device and an active load (PPDAL). Developed in 65 nm CMOS, the desired low reference voltage (441.3 mV) is achieved by substituting the BJT with MOSFET having a temperature coefficient (TC) of 10.65 ⁄. The EMI resisting ability in terms of DC shift is up to 2V amplitude by applying a double differential-input pair and a power supply independent bias scheme. The total power consumption is 104 W.en_US
dc.language.isoenen_US
dc.titleElectromagnetic Interference Resisting Circuiten_US
dc.typeOAPSen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.description.instructorProf. MAK, PUI-INen_US
dc.contributor.facultyFaculty of Science and Technologyen_US
dc.description.programmeBachelor of Science in Electrical and Electronics Engineeringen_US
Appears in Collections:FST OAPS 2014

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