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Title: Electromagnetic Interference Resisting Circuit
Authors: YANG, SHIHENG (楊世恒)
Department: Department of Electrical and Computer Engineering
Faculty: Faculty of Science and Technology
Issue Date: 2014
Citation: YANG, S. H. (2014). Electromagnetic Interference Resisting Circuit (Outstanding Academic Papers by Students (OAPS)). Retrieved from University of Macau, Outstanding Academic Papers by Students Repository.
Abstract: An electromagnetic interference (EMI) resisting circuit is described. It is improved from the classic Kuijk Bandgap with a PMOS pass device and an active load (PPDAL). Developed in 65 nm CMOS, the desired low reference voltage (441.3 mV) is achieved by substituting the BJT with MOSFET having a temperature coefficient (TC) of 10.65 ⁄. The EMI resisting ability in terms of DC shift is up to 2V amplitude by applying a double differential-input pair and a power supply independent bias scheme. The total power consumption is 104 W.
Instructor: Prof. MAK, PUI-IN
Programme: Bachelor of Science in Electrical and Electronics Engineering
Appears in Collections:FST OAPS 2014

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