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http://oaps.umac.mo/handle/10692.1/19| Title: | Electromagnetic Interference Resisting Circuit |
| Authors: | YANG, SHIHENG (楊世恒) |
| Department: | Department of Electrical and Computer Engineering |
| Faculty: | Faculty of Science and Technology |
| Issue Date: | 2014 |
| Citation: | YANG, S. H. (2014). Electromagnetic Interference Resisting Circuit (Outstanding Academic Papers by Students (OAPS)). Retrieved from University of Macau, Outstanding Academic Papers by Students Repository. |
| Abstract: | An electromagnetic interference (EMI) resisting circuit is described. It is improved from the classic Kuijk Bandgap with a PMOS pass device and an active load (PPDAL). Developed in 65 nm CMOS, the desired low reference voltage (441.3 mV) is achieved by substituting the BJT with MOSFET having a temperature coefficient (TC) of 10.65 ⁄. The EMI resisting ability in terms of DC shift is up to 2V amplitude by applying a double differential-input pair and a power supply independent bias scheme. The total power consumption is 104 W. |
| Instructor: | Prof. MAK, PUI-IN |
| Programme: | Bachelor of Science in Electrical and Electronics Engineering |
| URI: | http://hdl.handle.net/10692.1/19 |
| Appears in Collections: | FST OAPS 2014 |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| OAPS_2014_FST_019.pdf | 2 MB | Adobe PDF | View/Open |
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